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| SUP/SUB40N06-25L www..com Vishay Siliconix N-Channel 60-V (D-S), 175_C MOSFET, Logic Level PRODUCT SUMMARY V(BR)DSS (V) 60 rDS(on) (W) 0.022 @ VGS = 10 V 0.025 @ VGS = 4.5 V ID (A) 40 40 TO-220AB D TO-263 G DRAIN connected to TAB G GDS Top View SUP40N06-25L SUB40N06-25L S N-Channel MOSFET DS Top View ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energya Power Dissipation L = 0.1 mH TC = 25_C (TO-220AB and TO-263) TA = 25_C (TO-263)c TC = 25_C TC = 100_C Symbol VDS VGS ID IDM IAR EAR PD TJ, Tstg Limit 60 "20 40 25 100 40 80 90c 3.7 -55 to 175 Unit V A mJ W _C Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS Parameter PCB Mount (TO-263)c Junction-to-Ambient Free Air (TO-220AB) Junction-to-Case Notes: a. Duty cycle v 1%. b. See SOA curve for voltage derating. c. Surface Mounted on FR4 Board, t v 10 sec. Document Number: 70288 S-57253--Rev. C, 24-Feb-98 www.vishay.com S FaxBack 408-970-5600 RthJA RthJC Symbol Limit 40 80 1.6 Unit _C/W 2-1 SUP/SUB40N06-25L Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = 250 mA VDS = VGS, IDS = 250 mA VDS = 0 V, VGS = "20 V VDS = 60 V, VGS = 0 V Zero Gate Voltage Drain Current Z G Vl DiC IDSS VDS = 60 V, VGS = 0 V, TJ = 125_C VDS = 60 V, VGS = 0 V, TJ = 175_C On-State Drain Currenta ID(on) VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 20 A Drain-Source On-State Resistancea DiS OS Ri rDS(on) VGS = 10 V, ID = 20 A, TJ = 125_C VGS = 10 V, ID = 20 A, TJ = 175_C VGS = 4.5 V, ID = 20 A Forward Transconductancea gfs VDS = 15 V, ID = 20 A 40 60 www..com Symbol Test Condition Min Typ Max Unit V 1.0 2.0 3.0 "100 1 50 150 A 0.022 0.043 0.053 0.025 S W mA A nA Dynamicb Input Capacitance Output Capacitance Reversen Transfer Capacitance Total Gate Chargec Gate-Source Chargec Gate-Drain Chargec Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDD = 30 V, RL = 0.8 W , ID ] 40 A, VGEN = 10 V, RG = 2.5 W V, VDS = 30 V VGS = 10 V, ID = 40 A V VGS = 0 V, VDS = 25 V f = 1 MH V V, MHz 1800 350 100 40 9 10 10 9 28 7 20 20 ns 50 15 60 nC C pF F Source-Drain Diode Ratings and Characteristics (TC = Continuous Current Pulsed Current Forward Voltagea Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge Is ISM VSD trr IRM(REC) Qrr 25_C)b 40 A 100 IF = 40 A, VGS = 0 V 1.0 48 IF = 40 A, di/dt = 100 A/ms A di/d A/ 6 0.15 1.5 100 V ns A mC Notes: a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. www.vishay.com S FaxBack 408-970-5600 2-2 Document Number: 70288 S-57253--Rev. C, 24-Feb-98 SUP/SUB40N06-25L www..com Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 100 VGS = 10, 9, 8, 7 V 80 45 I D - Drain Current (A) 60 4V 40 I D - Drain Current (A) 6V 5V 60 Transfer Characteristics 30 TC = 125_C 15 25_C 0 -55_C 3 4 5 20 3V 0 0 2 4 6 8 10 0 1 2 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Transconductance 70 TC = -55_C 60 r DS(on) - On-Resistance ( ) g fs - Transconductance (S) 50 40 30 20 10 0 0 10 20 30 40 50 60 25_C 125_C 0.03 0.04 On-Resistance vs. Drain Current VGS = 4.5 V VGS = 10 V 0.02 0.01 0 0 10 20 30 40 50 60 ID - Drain Current (A) ID - Drain Current (A) Capacitance 3000 10 Gate Charge V GS - Gate-to-Source Voltage (V) 2500 C - Capacitance (pF) 8 VDS = 30 V ID = 40 A 2000 Ciss 6 1500 4 1000 500 Crss 0 0 15 Coss 2 0 30 45 60 0 10 20 30 40 50 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) Document Number: 70288 S-57253--Rev. C, 24-Feb-98 www.vishay.com S FaxBack 408-970-5600 2-3 SUP/SUB40N06-25L Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 2.5 VGS = 10 V ID = 20 A r DS(on) - On-Resistance ( ) (Normalized) 2.0 I S - Source Current (A) TJ = 150_C 100 www..com Source-Drain Diode Forward Voltage 1.5 TJ = 25_C 10 1.0 0.5 0 -50 1 -25 0 25 50 75 100 125 150 175 0 0.3 0.6 0.9 1.2 1.5 TJ - Junction Temperature (_C) VSD - Source-to-Drain Voltage (V) THERMAL RATINGS Drain Current vs. Case Temperature 50 200 100 40 I D - Drain Current (A) I D - Drain Current (A) Limited by rDS(on) 10 100 ms 1 ms Safe Operating Area 30 20 10 ms 1 TC = 25_C Single Pulse 100 ms dc, 1 s 10 0 0 25 50 75 100 125 150 175 0.1 0.1 1 10 100 TC - Case Temperature (_C) VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 Single Pulse 0.05 0.02 0.01 10-5 10-4 10-3 10-2 10-1 1 3 Square Wave Pulse Duration (sec) www.vishay.com S FaxBack 408-970-5600 Document Number: 70288 S-57253--Rev. C, 24-Feb-98 2-4 |
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